bd645, bd647, bd649, bd651 npn silicon power darlingtons
1 may 1993 - revised september 2002 specifications are subject to change without notice. designed for complementary use with bd646, bd648, bd650 and bd652 62.5 w at 25c case temperature 8 a continuous collector current minimum h fe of 750 at 3 v, 3 a absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 0.3 ms, duty cycle 10%. 2. derate linearly to 150c case temperature at the rate of 0.4 w/c. 3. derate linearly to 150c free air temperature at the rate of 16 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on) = 5 ma, r be = 100 ? , v be(off) = 0, r s = 0.1 ? , v cc = 20 v. rating symbol value unit collector-base voltage (i e = 0) bd645 bd647 bd649 bd651 v cbo 80 100 120 140 v collector-emitter voltage (i b = 0) bd645 bd647 bd649 bd651 v ceo 60 80 100 120 v emitter-base voltage v ebo 5v continuous collector current i c 8a peak collector current (see note 1) i cm 12 a continuous base current i b 0.3 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 62.5 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 2w unclamped inductive load energy (see note 4) ?li c 2 50 mj operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 260 c b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3
bd645, bd647, bd649, bd651 npn silicon power darlingtons 2
may 1993 - revised september 2002 specifications are subject to change without notice. notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = 30 ma i b = 0 (see note 5) bd645 bd647 bd649 bd651 60 80 100 120 v i ceo collector-emitter cut-off current v ce = 30 v v ce = 40 v v ce = 50 v v ce = 60 v i b =0 i b =0 i b =0 i b =0 bd645 bd647 bd649 bd651 0.5 0.5 0.5 0.5 ma i cbo collector cut-off current v cb = 60 v v cb = 80 v v cb = 100 v v cb = 120 v v cb = 40 v v cb = 50 v v cb = 60 v v cb = 70 v i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 t c = 150c t c = 150c t c = 150c t c = 150c bd645 bd647 bd649 bd651 bd645 bd647 bd649 bd651 0.2 0.2 0.2 0.2 2.0 2.0 2.0 2.0 ma i ebo emitter cut-off current v eb = 5 v i c = 0 (see notes 5 and 6) 5 ma h fe forward current transfer ratio v ce = 3 v i c = 3 a (see notes 5 and 6) 750 v ce(sat) collector-emitter saturation voltage i b = 12 ma i b = 50 ma i c = 3a i c = 5a (see notes 5 and 6) 2 2.5 v v be(sat) base-emitter saturation voltage i b = 50 ma i c = 5 a (see notes 5 and 6) 3 v v be(on) base-emitter voltage v ce = 3 v i c = 3 a (see notes 5 and 6) 2.5 v thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 2.0 c/w r ja junction to free air thermal resistance 62.5 c/w
bd645, bd647, bd649, bd651 npn silicon power darlingtons 3
may 1993 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a 05 10 10 h fe - typical dc current gain 50000 100 1000 10000 tcs130ad t c = -40c t c = 25c t c = 100c v ce = 3 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a 05 10 10 v ce(sat) - collector-emitter saturation voltage - v 05 10 15 20 tcs130ab t c = -40c t c = 25c t c = 100c t p = 300 s, duty cycle < 2% i b = i c / 100 base-emitter saturation voltage vs collector current i c - collector current - a 05 10 10 v be(sat) - base-emitter saturation voltage - v 05 10 15 20 25 30 tcs130ac t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2%
bd645, bd647, bd649, bd651 npn silicon power darlingtons 4
may 1993 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v 10 10 100 1000 i c - collector current - a 0.01 01 10 10 sas130ac bd645 bd647 bd649 bd651 maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 10 20 30 40 50 60 70 80 tis130ac
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